Different Effective Parameters on the Texturization of Silicon in KOH and IPA Solution and its Hydrophilic behavior

Document Type : Original Article

Authors

1 Engineering, Shahid Bahonar university of Kerman, Kerman, Iran

2 Engineering faculty, Shahid Bahonar university of Kerman, Kerman, Iran

Abstract

Micro-pyramidal structures have been synthesized on the single crystalline silicon (Si) substrate, using anisotropic etching in the potassium hydroxide (KOH) solution in the presence of the isopropyl alcohol (IPA) as the additive. Effect of the different parameters such as the concentrations of KOH and IPA and temperature on the etching process has been studied. Extracted results show that higher concentrations of the KOH and IPA, as well as the increasing temperature, lead to the larger pyramidal structures and less uniformity in their size and distributions. Incorporation of the porosity to the Si surface, before etching in the KOH solution can enhance the uniformity of the formed pyramidal structures. To the best of our knowledge, in this paper for the first time, we survey effects of the porosity which is created by the metal assisted chemical etching (MACE) method, on the formation of the micro-pyramids. Performing thermal treatment on the produced silver mask during MACE process before etching process, improves uniformity of the synthesized pyramids. For studying morphology of the formed structures, we use the field-emission scanning electron microscope (FE-SEM) images. Moreover hydrophilic behavior of the pyramidal structures has been studied. Contact angle test results show that more uniformity in the size and distribution of the structures, enhances the hydrophilicity of the surface

Keywords


[1] Z. Xi, D. Yang, W. Dan, C. Jun, X. Li, and D. Que, Renewable Energy, 29 (2004) 2101.
[2] M. Lipinski and J. Cichoszewski, in Proceedings of the 23rd European Photovoltaic Solar Energy Conference, WIP-Renewable Energies, Munich, Germany, (2008) 1911.
[3] C. Amri, R. Ouertani, A. Hamdi, and H. Ezzaouia, Materials Science in Semiconductor Processing, 63 (2017) 176.
[4] H. Han, Z. Huang, and W. Lee, Nano Today, 9 (2014) 271.
[5] U. Kaiser, M. Kaiser, and R. Schindler, in Tenth EC Photovoltaic Solar Energy Conference, (1991) 293.
[6] F. Konstantinou, A. Shougee, T. Albrecht, and K. Fobelets, Journal of Physics D: Applied Physics, 50 (2017) 415503.
[7] R. Martha and H. Nagaraja, Materials Characterization, 129 (2017) 24.
[8] S. Zafar, C. D’Emic, A. Afzali, B. Fletcher, Y. Zhu, and T. Ning, Nanotechnology, 22 (2011) 405501.
[9] J. W. Leem, B. Dudem, and J. S. Yu, RSC Advances, 7 (2017), 33757.
[10] R. Somayeh, E. Mohammad, H. Z. Mohadese, J. Of Applied Chemistry, 15 (1389) 19, in Persian.
[11] T. Zahra, N. Leila, K. Shole, J. Of Applied Chemistry, 42 (1396) 223, in Persian.
[12] F. Llopis and I. Tobías, Progress in Photovoltaics: Research and Applications, 13 (2005) 27.
[13] S. H. Ko et al., Nano letters, 11 (2011) 666.
[14] R. Blossey, Nature materials, 2 (2003) 301.
[15] I. P. Parkin and R. G. Palgrave, Journal of materials chemistry, 15 (2005)1689.
[16] L. Dobrzañski, A. Dryga³a, P. Panek, M. Lipiñski, and P. Ziêba, Archives of Materials Science, 6 (2009) 6.
[17] K. Xu, C. Zhang, R. Zhou, R. Ji, and M. Hong, Optics Express, 24 (2016) 10352.
[18] X. Liu, P. R. Coxon, M. Peters, B. Hoex, J. M. Cole, and D. J. Fray, Energy & Environmental Science, 7 (2014) 3223.
[19] R. Einhaus, E. Vazsonyi, J. Szlufcik, J. Nijs, and R. Mertens, in Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE, (1997) 167.
[20] F. Khan and A. Mobin, International Journal of Electronics and Computer Science Engineering, 2 (2013) 1065.
[21] G. Chen and I. Kashkoush, ECS Transactions, 25 (2010) 3.
[22] B. Azeredo et al., Nanotechnology, 24 (2013) 225305.
[23] H. Y. Zhang, C. W. Zhao, J. W. Guo, and J. F. Hou, in Advanced Materials Research, 382 (2012) 191.
[24] A. Wagner, (2004) 1.
[25] H. Seidel, L. Csepregi, A. Heuberger, and H. Baumgärtel, Journal of the electrochemical society, 137 (1990) 3612.
[26] I. Zubel and M. Kramkowska, Sensors and Actuators A: Physical, 93 (2001) 138.
[27] Z. Huang, N. Geyer, P. Werner, J. De Boor, and U. Gösele, Advanced materials, 23 (2011) 285.